Determination of silicon oxide precipitate stoichiometry using global and local techniques-Reference-Cited by-同舟云学术

Determination of silicon oxide precipitate stoichiometry using global and local techniques

Published:2013-01 Issue: Volume:363 Page:93-96
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nicolai J.,Burle N.,Pichaud B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

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3. Growth law for disc precipitates, and oxygen precipitation in silicon;Hu;Applied Physics Letters,1986

4. Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and tem;Lebedev;Physica B-Condensed Matter,2001

5. V. Monier, E´tude des dfauts cristallins dans le silicium par diffusion dela lumire, Ph.D. Thesis, Universit Paul Czanne Aix-Marseille III, 2010.

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