The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy

Author:

Sadler Thomas C.,Kappers Menno J.,Oliver Rachel A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics;Butte;J. Phys. D.,2007

2. Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials;Carlin;Phys. Status Solidi B,2005

3. Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates;Watson;Appl. Phys. Lett.,2005

4. E. Sillero, D. Lopez-Romero, F. Calle, M. Eickhoff, J.F. Carlin, N. Grandjean, M. Ilegems, Selective etching of AlInN/GaN heterostructures for MEMS technology, Microelectron. Eng., 84 (2007) 1152-1156.

5. InAlN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy;Higashiwaki;Jpn. J. Appl. Phys.,2004

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