Author:
Sadler Thomas C.,Kappers Menno J.,Oliver Rachel A.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics;Butte;J. Phys. D.,2007
2. Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials;Carlin;Phys. Status Solidi B,2005
3. Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates;Watson;Appl. Phys. Lett.,2005
4. E. Sillero, D. Lopez-Romero, F. Calle, M. Eickhoff, J.F. Carlin, N. Grandjean, M. Ilegems, Selective etching of AlInN/GaN heterostructures for MEMS technology, Microelectron. Eng., 84 (2007) 1152-1156.
5. InAlN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy;Higashiwaki;Jpn. J. Appl. Phys.,2004
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献