Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal–melt interface during the process of Czochralski silicon crystal growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace;Su;Journal of Crystal Growth,2010
2. The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals;Machida;Journal of Crystal Growth,1998
3. The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field;Machida;Journal of Crystal Growth,2000
4. Numerical simulation of oxygen transport during the CZ silicon crystal growth process;Chen;Journal of Crystal Growth,2011
5. Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process;Teng;Journal of Crystal Growth,2011
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1. The Effect of Physical Property Parameters of the Insulation Material Inside the Heat Shield on the Growth of Czochralski Silicon Crystal;Silicon;2023-11-28
2. A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications;Crystal Research and Technology;2023-11-28
3. Concentration Phase Separation of Substitution‐Doped Atoms in TMDCs Monolayer;Small;2023-04-14
4. Influence of crucible properties and Si3N4-coating composition on the oxygen concentration in multi-crystalline silicon ingots;Journal of Crystal Growth;2021-08
5. Effects of different cusp magnetic ratios and crucible rotation conditions on oxygen transport and point defect formation during Cz silicon crystal growth;Materials Science in Semiconductor Processing;2021-06
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