The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field-Reference-Cited by-同舟云学术

The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field

Published:2000-03 Issue:4 Volume:210 Page:532-540
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Machida Norihisa,Hoshikawa Keigo,Shimizu Yasuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals

2. Silicon Processing, ASTM STP 804;Lin,1983

3. Semiconductor Silicon 1990;Zulehner,1990

4. K. Hoshi, T. Suzuki, Y. Okubo, N. Isawa, Ext. Abstr., 157th Electrochem. Soc. Meet., 1980, p. 811.

5. ASTM Standard F-121, Part 43, American Standard for Testing and Materials, 1979.

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