TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiNx interlayers-Reference-Cited by-同舟云学术

TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiNx interlayers

Published:2011-06 Issue:1 Volume:324 Page:63-72
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Klein O.,Biskupek J.,Forghani K.,Scholz F.,Kaiser U.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. InGaN/AlGaN double-heterostructure LEDs;Mukai;J. Cryst. Growth,1998

2. TEM analysis of threading dislocations in crack-free AlxGa1−xN grown on an AlN(0001) template;Kuwano;Phys. Status Solidi C,2003

3. Structural and spectroscopic properties of AlN layers grown by MOVPE;Thapa;J. Cryst. Growth,2007

4. Growth and studies of Si-doped AlN layers;Thapa;J. Cryst. Growth,2008

5. MOVPE growth of high quality AlN layers and effects of Si doping;Thapa;Phys. Status Solidi C,2008

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved characteristics of (11 2‾2) plane AlGaN films grown on SiNx interlayer;Materials Science in Semiconductor Processing;2024-10

2. Silicon Nitride Nanopores Formed by Simple Chemical Etching: DNA Translocations and TEM Imaging;ACS Nano;2022-10-17

3. Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE;Materials Science in Semiconductor Processing;2022-05

4. Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask;Coatings;2020-12-25

5. AlxGa1−xN GROWTH BY Si/N TREATMENT OF SAPPHIRE SUBSTRATE: COMPARISON WITH OTHERS GROWTH TECHNIQUES;Surface Review and Letters;2019-07-15