Migration-enhanced metal–organic chemical vapor deposition of AlxIn1−xN/GaN heterostructures (x>0.75) on c-plane sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. AlGaN/GaN HEMT With 300-GHz $f_{\max}$
2. 30-W/mm GaN HEMTs by Field Plate Optimization
3. GaN-based Material and Devices: Growth, Fabrication, Characterization and Performance;Shur,2004
4. A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors
5. Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
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1. Growth of 10 nm-thick AlIn(Ga)N/GaN heterostructure with high electron mobility and low sheet resistance;physica status solidi (b);2017-04-24
2. Carrier dynamics and localization in AlInN/GaN heterostructures;physica status solidi (c);2013-02-06
3. Transient photoreflectance of AlInN/GaN heterostructures;AIP Advances;2012-12
4. Photoexcited carrier dynamics in AlInN/GaN heterostructures;Applied Physics Letters;2012-06-11
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