Photoexcited carrier dynamics in AlInN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4729033
Reference16 articles.
1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2. Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys
3. Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al$_{0.82}$In$_{0.18}$N Grown on GaN
4. Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
5. Migration-enhanced metal–organic chemical vapor deposition of AlxIn1−xN/GaN heterostructures (x>0.75) on c-plane sapphire
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1. Sub-bandgap optical absorption processes in 300-nm-thick Al1−xInxN alloys grown on a c-plane GaN/sapphire template;Journal of Applied Physics;2024-01-17
2. Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21);Journal of Applied Physics;2022-10-28
3. Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures;Materials;2022-01-31
4. Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy;Applied Physics Letters;2021-08-30
5. Multi-modal and multi-scale non-local means method to analyze spectroscopic datasets;Ultramicroscopy;2020-02
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