Oxygen content increasing mechanism in Czochralski (CZ) silicon crystals doped with heavy antimony under a double-typed heat shield
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Rapidly Quenched Ribbon-Form Silicon and Silicon-Iron
2. On the Mechanism of Oxygen Content Reduction by Antimony Doping of Czochralski Silicon Melts
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1. The effects on heat and oxygen transport of different heat shield and sidewall insulation designs during continuous Czochralski silicon crystal growth;Journal of Crystal Growth;2024-09
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3. Effect of Heater Structure on Oxygen Concentration in Large Diameter N-Type Czochralski Silicon Study Using Numerical Simulation;2024
4. Numerical Study on the Effect of Water-cooling Jacket Radius on Czochralski Silicon;Silicon;2023-04-01
5. Effect of Heater Structure on Oxygen Concentration in Large Diameter N-Type Czochralski Silicon Study Using Numerical Simulation;2023
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