Single phase {112¯2} GaN on (101¯0) sapphire grown by metal-organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Single phase {112¯2} GaN on (101¯0) sapphire grown by metal-organic vapor phase epitaxy

Published:2011-09 Issue:1 Volume:331 Page:25-28
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ploch Simon,Bum Park Jae,Stellmach Joachim,Schwaner Tilman,Frentrup Martin,Niermann Tore,Wernicke Tim,Pristovsek Markus,Lehmann Michael,Kneissl Michael

Funder

Deutsche Forschungsgemeinschaft

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

2. Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. Strain-induced polarization in wurtzite III-nitride semipolar layers

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1. Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar (112¯2) substrate using cathodoluminescence in transmission electron microscopy;Journal of Vacuum Science & Technology A;2024-02-01

2. Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 112¯2 InGaN/GaN Multi-Quantum Wells;Nanomaterials;2023-06-27

3. The influence of high-temperature nitridation process on the crystalline quality of semipolar (112‾2) GaN epitaxial films;Current Applied Physics;2022-07

4. A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition;Semiconductor Science and Technology;2022-05-05

5. Influence of Nucleation Layers on MOVPE Growth of Semipolar ($$11{\bar{2}}2$$) GaN on m-Plane Sapphire;Journal of Electronic Materials;2021-05-21