Numerical study on transport phenomena in a directional solidification process in the presence of travelling magnetic fields
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Numerical analysis of the influence of tilt of crucibles on interface shape and fields of temperature and velocity in the unidirectional solidification process;Miyazawa;J. Crystal Growth,2008
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3. 3D dynamic mesh numerical model for multi-crystalline silicon furnaces;Delannoy;J. Crystal Growth,2007
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5. W. Miller, Numerical simulations of bulk crystal growth on different scales Si and GeSi, Phys. Status Solidi A, 2009, submitted for publication.
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3. Numerical Modeling of Thermal and Flow Field in Directional Solidification Silicon under Vertical Magnetic Field;Silicon;2020-11-24
4. Control of Melt Flow and Oxygen Distribution Using Traveling Magnetic Field during Directional Solidification of Silicon Ingots;Silicon;2019-12-02
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