Author:
Su Wenjia,Li Chen,Qi Xiaofang,Yang Wei,Wang Junfeng
Funder
National Defense Science and Technology Key Laboratory Funding
National Natural Science Foundation for Young Scholars of China
National Natural Science Foundation for Young Scholars of Jiangsu province
Research Fund for the Doctoral Program of Higher Education of China
Scientific Research Foundation for Distinguished Technical scholars of Jiangsu University
Postdoctoral Research Funding Scheme of Jiangsu Province
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. W. Su, W. Niu, X. Qi, C. Li, J. Wang, A review of numerical simulation for impurity control in the directional solidification process of multicrystalline silicon, Mater. Rev. 32(11), pp. 42–52.
2. A novel method for gas flow and impurity control in directional solidification of multi-crystalline silicon;Bellmann;J. Cryst. Growth,2014
3. Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells;Gao;J. Cryst. Growth,2010
4. Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells;Liu;J. Cryst. Growth,2008
5. The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multicrystalline silicon;Trempa;J. Cryst. Growth,2010
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献