Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Growth and applications of Group III-nitrides
2. Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
3. Current-voltage characteristics of n∕n lateral polarity junctions in GaN
4. Playing with Polarity
5. Infrared studies on GaN single crystals and homoepitaxial layers
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1. Lateral polarity controlled quasi-vertical GaN Schottky barrier diode with sidewalls absence of plasma damages;Applied Physics Letters;2023-12-18
2. Polarity Control in AlGaN and Recent Advances in Lateral-polarity-structure Based Optoelectronic and Electronic Devices;2023 Photonics & Electromagnetics Research Symposium (PIERS);2023-07-03
3. Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure;physica status solidi (RRL) – Rapid Research Letters;2023-01-04
4. Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation;Applied Physics Letters;2022-07-04
5. GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions;Journal of Applied Physics;2022-01-07
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