Misoriented domain formation in 6H-SiC single crystal
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Silicon carbide for microwave power applications
3. Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals
4. Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
5. Seeded sublimation growth of 6H and 4H–SiC crystals
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method;Materials Science Forum;2020-07
2. A novel method of coating ex-situ SiC particles with in-situ SiC interlayer in Al-Si-C alloy;Journal of Alloys and Compounds;2018-07
3. Effect of vanadium on the room temperature ferromagnetism of V-doped 6H—SiC powder;Chinese Physics B;2013-02
4. Formation and suppression of misoriented grains in 6H-SiC crystals;CrystEngComm;2011
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