Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities

Author:

Nakabayashi Masashi1,Fujimoto Tatsuo1,Katsuno Masakazu1,Ohtani Noboru2,Tsuge Hiroshi1,Yashiro Hirokatsu1,Aigo Takashi1,Hoshino Taizo1,Hirano Hosei1,Tatsumi Kohei1

Affiliation:

1. Nippon Steel Corporation

2. Kwansei Gakuin University

Abstract

The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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