Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers
3. High temperature performance of self-organised quantum dot laser with stacked p-doped active region
4. Ground state lasing at 1.34μm from InAs∕GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition
5. Self organization phenomena of quantum dots grown by metalorganic chemical vapour deposition
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1. Effect of Rapid-Thermal Annealing on Quantum Dot Properties;Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors;2017-09-07
2. Spectral broadening due to post-growth annealing of a long-wave InGaAs/GaAs quantum dot infrared photodetector with a quaternary barrier layer;Thin Solid Films;2014-02
3. A Theoretical Investigation on the Dimensions and Annealing Effects of InAs/GaAs Quantum Dots for Device Applications at High Bit-Rate Optical Transmission Window of 1.3-1.55 μm;Advanced Materials Research;2012-10
4. Protection effect of a SiO2layer in Al0.85Ga0.15As wet oxidation;Journal of Semiconductors;2012-10
5. Theoretical optimization of multi-layer InAs/GaAs quantum dots subject to post-growth thermal annealing for tailoring the photoluminescence emission beyond 1.3 μm;Journal of Applied Physics;2012-07-15
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