The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2. Effect of V/III ratio in AlN and AlGaN MOVPE
3. MOVPE growth of InN films and quantum dots
4. Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
5. Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyN
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1. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition;Journal of Alloys and Compounds;2024-12
2. TMAH Pretreatment to Minimize Ohmic Contact Resistance in InAlN/GaN-on-Si RF HEMTs;IEEE Transactions on Electron Devices;2023-11
3. Structural and optical characterization of thin AlInN films on c-plane GaN substrates;Journal of Applied Physics;2023-08-17
4. Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors;Journal of Physics D: Applied Physics;2023-04-12
5. Molecular beam epitaxy of InAlN alloys in the whole compositional range;AIP Advances;2020-01-01
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