Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450°C
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Polarity dependence of AlN {0001} decomposition in flowing H2
2. Seeded growth of AlN bulk single crystals by sublimation
3. Fabrication of native, single‐crystal AlN substrates
4. Sublimation growth of AlN bulk crystals in Ta crucibles
5. Crystal growth of aluminum nitride under high pressure of nitrogen
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1. 2-inch semi-polar (112̄2) AlN templates prepared by high-temperature hydride vapor phase epitaxy;CrystEngComm;2024
2. Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy;CrystEngComm;2024
3. Fablication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs;Japanese Journal of Applied Physics;2021-12-01
4. Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE;Micromachines;2021-09-25
5. Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE;Materials;2021-03-31
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