1. 2.3μm type-I quantum well GaInAsSb/AlGaAsSb/GaSb laser diodes with quasi-CW output power of 1.4mW;Donetsky;IEE,2007
2. Interband cascade laser emitting at 3.75μm in continuous wave above room temperature;Kim;AIP,2008
3. Temperature dependent characteristics of lambda ∼3.8μm room-temperature continuous-wave quantum-cascade lasers;Yu;AIP,2006
4. Room-temperature operation of MOCVD-grown GaInAs/InP strained-layer multiquantum well lasers in 1.8μm range;Forouhar;IEE,1992
5. Metalorganic vapor phase epitaxical growth and 1.5μm laser fabrication using ethyldimethylindium, tertiarybutylphosphine, and tertiarybutylarsine;Matsuyuki;AIP,1992