The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Control of metal impurities in dirty multicrystalline silicon for solar cells;Istratov;Materials Science and Engineering B,2006
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3. Influence of extended defects and native impurities on the electrical properties of directionally solidified polycrystalline silicon;Pizzini;Journal of The Electrochemical Society,1988
4. Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells;Liu;Journal of Crystal Growth,2008
5. Growth rate and impurity distribution in multicrystalline silicon for solar cells;Kvande;Materials Science and Engineering A,2005
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