Modeling and simulation of a novel susceptor composed of two materials in MOVPE reactor-Reference-Cited by-同舟云学术

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Modeling and simulation of a novel susceptor composed of two materials in MOVPE reactor

Published:2014-09 Issue: Volume:402 Page:175-178
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Li Zhiming,Zhang Jincheng,Li Jinping,Jiang Haiying,Fu Xiaoqian,Han Yanbin,Xia Yingjie,Huang Yimei,Yin Jianqin,Zhang Lejuan,Hao Yue

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition

2. High growth rate MOVPE of Al(Ga)N in planetary reactor

3. Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition

4. Integration of CFD and Nelder–Mead algorithm for optimization of MOCVD process in an atmospheric pressure vertical rotating disk reactor

5. Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chromium Carbide Growth by Direct Liquid Injection Chemical Vapor Deposition in Long and Narrow Tubes, Experiments, Modeling and Simulation;Coatings;2018-06-13

2. Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach;Coatings;2017-09-01

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