Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application-Reference-Cited by-同舟云学术

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

Published:2014-11 Issue: Volume:405 Page:87-91
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim T.W.,Kuech T.F.,Mawst L.J.

Funder

University of Wisconsin Materials Research Science and Engineering Center

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

2. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

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4. Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

5. Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers

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