Improved GaN-on-Si epitaxial quality by incorporating various SixNy interlayer structures-Reference-Cited by-同舟云学术

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Improved GaN-on-Si epitaxial quality by incorporating various SixNy interlayer structures

Published:2014-08 Issue: Volume:399 Page:27-32
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Tzu-Yu,Ou Sin-Liang,Horng Ray-Hua,Wuu Dong-Sing

Funder

Ministry of Economic Affairs

National Science Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. Effects of step-graded AlxGa1−xN interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition

2. Nitride-Based Light Emitting Diodes With Textured Sidewalls and Pillar Waveguides

3. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

4. Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

5. MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates

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1. AlGaN/GaN Heterostructures Electrical Performance by Altering GaN/Sapphire Buffers Growth Pressure and Low‐Temperature GaN Interlayers Application;Crystal Research and Technology;2021-10-07

2. A review on GaN-based two-terminal devices grown on Si substrates;Journal of Alloys and Compounds;2021-07

3. Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask;Coatings;2020-12-25

4. Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD;Materials Science in Semiconductor Processing;2017-03

5. The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer;Journal of Materials Science: Materials in Electronics;2017-01-09

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