Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization-Reference-Cited by-同舟云学术

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Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization

Published:2014-09 Issue: Volume:401 Page:133-136
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Miyamura Y.,Harada H.,Jiptner K.,Chen J.,Prakash R.R.,Nakano S.,Gao B.,Kakimoto K.,Sekiguchi T.

Funder

Ministry of Economy, Trade and Industry

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. High quality multicrystalline silicon grown by multi-stage solidification control method

2. Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting

3. Grain control using spot cooling in multi-crystalline silicon crystal growth

4. Bulk multicrystalline silicon growth for photovoltaic (PV) application

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1. Transient Simulation on the Growth of Mono-like Silicon Ingot in DS Process Using Crucible with Plano-Concave Bottom for PV Applications;Silicon;2021-05-12

2. SMART Cast‐Monocrystalline p‐Type Silicon Passivated Emitter and Rear Cells: Efficiency Benchmark and Bulk Lifetime Analysis;Solar RRL;2021-03

3. Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects;Crystals;2021-01-22

4. Defect engineering in cast mono‐like silicon: A review;Progress in Photovoltaics: Research and Applications;2020-11-24

5. Mono-like cast method;Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces;2020

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