Transient Simulation on the Growth of Mono-like Silicon Ingot in DS Process Using Crucible with Plano-Concave Bottom for PV Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01144-x.pdf
Reference31 articles.
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5. Li TF, Yeh KM, Hsu WC, Lan CW (2011) High-quality multi-crystalline silicon (mc-Si) grown by directional solidification using notched crucibles. J Cryst Growth 318:219–223
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