Defect formation during the initial stage of physical vapor transport growth of 4H–SiC in the[112¯0]direction-Reference-Cited by-同舟云学术

Defect formation during the initial stage of physical vapor transport growth of 4H–SiC in the[112¯0]direction

Published:2014-12 Issue: Volume:408 Page:1-6
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ohshige Chikashi,Takahashi Tatsuya,Ohtani Noboru,Katsuno Masakazu,Fujimoto Tatsuo,Sato Shinya,Tsuge Hiroshi,Yano Takayuki,Matsuhata Hirofumi,Kitabatake Makoto

Funder

Ministry of Economy, Trade and Industry (METI)

New Energy and Industrial Technology Development Organization (NEDO)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Ultrahigh-quality silicon carbide single crystals

2. TSD Reduction by RAF (Repeated a-Face) Growth Method

3. Structural defects in α-SiC single crystals grown by the modified-Lely method

4. Nucleation of threading dislocations in sublimation grown silicon carbide

5. Silicon Carbide, vol. 1;Epelbaum,2010

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1. Seed surface orientation dependence of the defect formation at the initial stage of physical vapor transport growth of 4H-SiC crystals;Journal of Crystal Growth;2022-11

2. Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process;Materials;2022-03-03

3. Dislocation Formation During Physical Vapor Transport Growth of 4 H‐SiC Crystals;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

4. Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals;Journal of Electronic Materials;2021-03-11

5. Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography;Japanese Journal of Applied Physics;2020-08-20