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Selective growth of (001) GaAs using a patterned graphene mask

  • Published:2014-09 Issue: Volume:401 Page:563-566
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Hirota Yujirou,Shirai Yuya,Iha Hiromu,Kito Yusuke,Suzuki Manabu,Kato Hironao,Yamamoto Nao,Maruyama Takahiro,Naritsuka Shigeya

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A-plane GaN microchannel epitaxy on r-plane sapphire substrate using patterned graphene mask;Journal of Crystal Growth;2024-03

2. Influence of patterned graphene mask on nucleation behavior of GaN by MOCVD;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

3. A-Plane Gan Microchannel Epitaxy on R-Plane Sapphire Substrate Using Patterned Graphene Mask;2023

4. Silicene/GaAs van der Waals heterostructure for optoelectronic applications;Journal of Materials Science;2022-11-29

5. Direct Growth of Patterned Ge on Insulators Using Graphene;The Journal of Physical Chemistry C;2021-06-18
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