Connection between GaN and InGaN growth mechanisms and surface morphology
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference54 articles.
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3. The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy;Oliver;J. Cryst. Growth,2004
4. High spatial resolution picosecond cathodoluminescence of InGaN quantum wells;Sonderegger;Appl. Phys. Lett.,2006
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