Author:
Yamashita T.,Matsuhata H.,Naijo T.,Momose K.,Osawa H.
Funder
Ministry of Economy
METI
New Energy and Industrial Technology Development Organization
NEDO
Ministry of Education
MEXT
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Cited by
10 articles.
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1. Structural analysis of stacking fault complex origin in 4H-SiC epitaxial wafer;Journal of Crystal Growth;2024-12
2. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
3. Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography;Journal of Electronic Materials;2022-01-16
4. Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers;CrystEngComm;2022
5. Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers;Materials Science Forum;2020-07