Comparison between numerical modeling and experimental measurements of the interface shape in Kyropoulos growth of Ti-doped sapphire crystals
Author:
Funder
French Government
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Spectroscopic and laser characteristics of Ti:Al_2O_3
2. Ti-Doped Sapphire (Al2O3) Single Crystals Grown by the Kyropoulos Technique and Optical Characterizations
3. Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method
4. 3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth
5. Numerical simulation of heat and fluid flows for sapphire single crystal growth by the Kyropoulos method
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1. Development and validation of a thermal simulation for the Czochralski crystal growth process using model experiments;Journal of Crystal Growth;2022-09
2. On the way to modelling dopant valence in ionic crystal growth: the Ti:Al2O3 case;CrystEngComm;2022
3. Effect of Internal Radiation on Heat Transfer during Ti:sapphire Crystal Growth Process by Heat Exchanger Method;International Journal of Heat and Mass Transfer;2021-05
4. Analysis of Bulk Radiative Heat Transfer in a Crystal and in a Melt Using Numerical Simulation of the Sapphire Crystal Growth by the Stepanov Method;Technical Physics;2020-08
5. Origin of scattering defect observed in large diameter Ti:Al2O3 crystals grown by the Kyropoulos technique;Journal of Crystal Growth;2020-04
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