On the way to modelling dopant valence in ionic crystal growth: the Ti:Al<sub>2</sub>O<sub>3</sub> case-Reference-Cited by-同舟云学术

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On the way to modelling dopant valence in ionic crystal growth: the Ti:Al₂O₃ case

Published:2022 Issue:25 Volume:24 Page:4509-4518
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Xuan Lingling¹^ORCID,Duffar Thierry¹

Affiliation:

1. Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMAP, 38000 Grenoble, France

Abstract

and kann obtained from numerical simulations of Ti:sapphire annealing experiments (left) and their applications during crystal growth (right).

Funder

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D2CE00547F

Reference34 articles.

1. Evolution of Cr 4+ , Cr 3+ and Cr 2+ contents in Cr:Mg 2 SiO 4 single crystals during their prolonged high-temperature oxidizing annealing

2. X-ray-excited charge transfer luminescence in YAG:Yb and YbAG

3. Evidence and Consequences of Ce$^{4+}$ in LYSO:Ce,Ca and LYSO:Ce,Mg Single Crystals for Medical Imaging Applications

4. Control of optical properties of YAG crystals by thermal annealing

5. Electrical Properties of Single-Crystal and Polycrystalline Alumina at High Temperatures

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