Evolution of impurity incorporation during ammonothermal growth of GaN-Reference-Cited by-同舟云学术

Evolution of impurity incorporation during ammonothermal growth of GaN

Published:2016-12 Issue: Volume:456 Page:51-57
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sintonen Sakari,Wahl Stefanie,Richter Susanne,Meyer Sylke,Suihkonen Sami,Schulz Tobias,Irmscher Klaus,Danilewsky Andreas N.,Tuomi Turkka O.,Stankiewicz Romuald,Albrecht Martin

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays;DenBaars;Acta Mater.,2013

2. Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy;Usui;Jpn. J.,1997

3. High pressure growth of bulk gan from solutions in gallium;Grzegory;J. Phys. Condens. Matter,2001

4. Centimeter-sized bulk GaN single crystals grown by the Na-flux method with a necking technique;Imade;Cryst. Growth Des.,2012

5. Bulk ammonothermal GaN;Dwiliński;J. Cryst. Growth,2009

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