Centimeter-Sized Bulk GaN Single Crystals Grown by the Na-Flux Method with a Necking Technique
Author:
Affiliation:
1. Division of Electric, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg300643r
Reference20 articles.
1. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
2. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
3. Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
4. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
5. Bulk GaN crystals grown by HVPE
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