Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN-Reference-Cited by-同舟云学术

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Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN

Published:2016-12 Issue: Volume:456 Page:43-50
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sintonen Sakari,Kivisaari Pyry,Pimputkar Siddha,Suihkonen Sami,Schulz Tobias,Speck James S.,Nakamura Shuji

Funder

University of California

NSF

Jenny and Antti Wihuri Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference37 articles.

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2. History of gallium-nitride-based light-emitting diodes for illumination;Nakamura;Proc. IEEE,2013

3. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation;Hurni;Appl. Phys. Lett.,2015

4. T.D. Heidel, B.A. Hamilton, Power devices on bulk gallium nitride substrates: an overview of ARPA-E's SWITCHES program, in: Proceedings of IEEE International Electron Devices Meeting, 2014, pp. 44–47. 〈http://dx.doi.org/10.1109/IEDM.2014.7046969〉.

5. Wafer-level photocatalytic water splitting on gan nanowire arrays grown by molecular beam epitaxy;Wang;Nano Lett.,2011

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1. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25

2. Ohmic Contact to n-GaN Using RT-Sputtered GaN:O;Materials;2023-08-11

3. Effect of Oxygen and Aluminum Incorporation on the Local Structure of GaN Nanowires: Insight from Extended X-ray Absorption Fine Structure Analysis;The Journal of Physical Chemistry C;2021-02-02

4. Study of lateral growth regions in ammonothermal c-plane GaN;Journal of Crystal Growth;2021-02

5. Stress evolution in different growth mechanism of GaN grown by Na-flux method;Japanese Journal of Applied Physics;2020-10-13

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