Effect of Oxygen and Aluminum Incorporation on the Local Structure of GaN Nanowires: Insight from Extended X-ray Absorption Fine Structure Analysis-Reference-Cited by-同舟云学术

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Effect of Oxygen and Aluminum Incorporation on the Local Structure of GaN Nanowires: Insight from Extended X-ray Absorption Fine Structure Analysis

Published:2021-02-02 Issue:5 Volume:125 Page:3225-3234
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Parida Santanu¹^ORCID,Sahoo Madhusmita¹,N Abharana²,Tromer Raphael M.³,Galvao Douglas S.³⁴^ORCID,Dhara Sandip¹^ORCID

Affiliation:

1. Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Homi Bhabha National Institute, Kalpakkam 603102, India

2. Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India

3. Applied Physics Department, State University of Campinas, Campinas 13083-970, SP, Brazil

4. Center for Computational Engineering and Sciences, State University of Campinas, Campinas 13083-970, SP, Brazil

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c10669

Reference53 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Ultraviolet light-emitting diodes based on group three nitrides

3. Continuous Wave Blue Lasing in III-Nitride Nanobeam Cavity on Silicon

4. Nanostructured materials for supercapacitor applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy;Materials;2024-06-14

2. DFT Studies of Photocatalytic Properties of Silicon- and Boron-doped Gallium-nitride Nanotubes for Hydrogen Evolution and Carbondioxide Capture;Silicon;2024-02-03

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