Author:
Nakane Harunobu,Akiyama Toru,Nakamura Kohji,Ito Tomonori
Funder
Grand-in-Aid for Scientific Research
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers
3. Polarity control of GaN grown on ZnO (0001¯) surfaces
4. Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates
5. T. Iwabuchi, S. Kuboya, T. Tanikawa, T. Hanada, R. Katayama, A. Minato, T. Fukuda, T. Matsuoka, the 61th JSAP Spring Meeting, 18a-E13-8, 2014.
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