Enhancement of lateral growth of the GaN crystal with extremely low dislocation density during the Na-flux growth on a point seed-Reference-Cited by-同舟云学术

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Enhancement of lateral growth of the GaN crystal with extremely low dislocation density during the Na-flux growth on a point seed

Published:2017-06 Issue: Volume:468 Page:827-830
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hayashi Masatoshi,Imanishi Masayuki,Yamada Takumi,Matsuo Daisuke,Murakami Kosuke,Maruyama Mihoko,Imade Mamoru,Yoshimura Masashi,Mori Yusuke

Funder

Ministry of the Environment and the Japan Science and Technology Agency

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

2. Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

3. Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT

4. Origin of forward leakage current in GaN-based light-emitting devices

5. Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method;Journal of Materials Science;2024-04-12

2. Effects of Solution Height on the Growth of GaN Crystals in the Na-Flux Liquid-Phase Method;Crystal Growth & Design;2024-04-01

3. Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method;Journal of Crystal Growth;2023-11

4. Bias-assisted photoelectrochemical planarization of GaN (0001) with impurity concentration distribution;AIP Advances;2023-09-01

5. Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices;Crystals;2022-08-03

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