Growth and characterization of β-Ga2O3 crystals-Reference-Cited by-同舟云学术

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Growth and characterization of β-Ga2O3 crystals

Published:2017-01 Issue: Volume:457 Page:132-136
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nikolaev V.I.,Maslov V.,Stepanov S.I.,Pechnikov A.I.,Krymov V.,Nikitina I.P.,Guzilova L.I.,Bougrov V.E.,Romanov A.E.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Ga2O3 Schottky barrier diodes fabricated by using single-crystal B-Ga2O3 (010) substrates;Sasaki;IEEE Electron Device Lett.,2013

2. High-mobility β-Ga2O3 single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact;Oishi;Appl. Phys. Express,2015

3. Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor;Matsuzaki;Thin Solid Films,2006

4. MBE grown Ga2O3 and its power device applications;Sasaki;J. Cryst. Growth,2013

5. Gallium oxide (Ga2O3) metal–semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates;Higashiwaki;Appl. Phys. Lett.,2012

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1. Semi-insulating β-Ga2O3 single crystals through vanadium doping: Growth, Optical and Terahertz characterization;Journal of Crystal Growth;2024-07

2. Effect of 60Co gamma irradiation on hydrothermally synthesized Ga2O3-Tio2 nanocomposites;Radiation Protection Dosimetry;2024-07

3. Study on phase characteristics of heterostructure por-Ga2O3/GaAs;Himia, Fizika ta Tehnologia Poverhni;2024-06-30

4. Deep Ultraviolet Optical Anisotropy of β-Gallium Oxide Thin Films;ACS Omega;2024-06-21

5. Unraveling evolution of microstructural domains in the heteroepitaxy of β -Ga2O3 on sapphire;Applied Physics Letters;2024-03-18

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