Homoepitaxial growth of HVPE-GaN doped with Si-Reference-Cited by-同舟云学术

Homoepitaxial growth of HVPE-GaN doped with Si

Published:2016-12 Issue: Volume:456 Page:91-96
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Iwinska M.,Sochacki T.,Amilusik M.,Kempisty P.,Lucznik B.,Fijalkowski M.,Litwin-Staszewska E.,Smalc-Koziorowska J.,Khapuridze A.,Staszczak G.,Grzegory I.,Bockowski M.

Funder

National Center for Research and Development

Polish National Science Center

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. T. Paskova, M. Bickerman, Handbook of Crystal Growth, vol. 602, Second ed., Elsevier, 2015.

2. A. Koukitu, Y. Kumagai, Technology of Gallium Nitride Crystal Growth, vol. 31, Springer-Verlag, Heidelberg, 2010.

3. Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

4. Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds

5. HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

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