Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds-Reference-Cited by-同舟云学术

Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds

Published:2014-04-11 Issue:5S1 Volume:53 Page:05FA04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sochacki Tomasz,Amilusik Mikolaj,Lucznik Boleslaw,Fijalkowski Michal,Weyher Janusz Ludwik,Sadovyi Bohdan,Kamler Grzegorz,Nowak Grzegorz,Litwin-Staszewska Elzbieta,Khachapuridze Aleksander,Grzegory Izabella,Kucharski Robert,Zajac Marcin,Doradzinski Roman,Bockowski Michal

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=5S1/a=05FA04/pdf

Reference17 articles.

1. Ammonothermal Growth of GaN Under Ammono-Basic Conditions

2. Ammonothermal Recrystallization of Gallium Nitride with Acidic Mineralizers

3. Acidic Ammonothermal Growth Technology for GaN

4. Bulk ammonothermal GaN

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