HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties-Reference-Cited by-同舟云学术

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

Published:2014-05 Issue: Volume:394 Page:55-60
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sochacki Tomasz,Bryan Zachary,Amilusik Mikolaj,Bobea Milena,Fijalkowski Michal,Bryan Isaac,Lucznik Boleslaw,Collazo Ramon,Weyher Jan L.,Kucharski Robert,Grzegory Izabella,Bockowski Michal,Sitar Zlatko

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Technology of Gallium Nitride Crystal Growth;Koukitu,2010

2. Technology of Gallium Nitride Crystal Growth;Oshima,2010

3. Growth and strain characterization of high quality GaN crystal by HVPE

4. Technology of Gallium Nitride Crystal Growth;Doradziński,2010

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