Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials
Author:
Funder
JSPS KAKENHI
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference44 articles.
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4. Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates;Oshima;Appl. Phys. Express,2015
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