HVPE growth of AlxGa1−xN ternary alloy using AlCl3 and GaCl
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition
2. Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes
3. Report on the growth of bulk aluminum nitride and subsequent substrate preparation
4. Seeded growth of AlN bulk single crystals by sublimation
5. Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates
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