One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55μm application
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
2. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
3. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
4. Continuous-wave operation of 1.5μm InGaAs∕InGaAsP∕InP quantum dot lasers at room temperature
5. InAs∕InP(001) quantum dots emitting at 1.55μm grown by low-pressure metalorganic vapor-phase epitaxy
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1. Solution epitaxy of patterned ZnO nanorod arrays by interference lithography;Progress in Crystal Growth and Characterization of Materials;2012-06
2. Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth;Nanotechnology;2012-05-10
3. Entanglement dynamics of one-dimensional driven spin systems in time-varying magnetic fields;Physical Review A;2011-08-08
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