Continuous-wave operation of 1.5μm InGaAs∕InGaAsP∕InP quantum dot lasers at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2034108
Reference12 articles.
1. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
2. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
3. 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots
4. Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
5. Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates
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4. Junction-Temperature Measurement in InAs/InP(100) Quantum-Dot Lasers;Chinese Physics Letters;2015-01
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