Optimization of the design of a crucible for a SiC sublimation growth system using a global model
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Investigation of growth processes of ingots of silicon carbide single crystals
2. General principles of growing large-size single crystals of various silicon carbide polytypes
3. Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals
4. Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals
5. On the sublimation growth of SiC bulk crystals: development of a numerical process model
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3. The Thermal Field Design of a 150 mm Sic Crystal Growth System by Numerical Simulation;Crystal Research and Technology;2023-10-11
4. Optimization of the thermal field of 8-inch SiC crystal growth by PVT method with “3 separation heater method”;Journal of Crystal Growth;2023-07
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