Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy-Reference-Cited by-同舟云学术

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Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

Published:2008-03 Issue:6 Volume:310 Page:1049-1056
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Heiß Martin,Riedlberger Eva,Spirkoska Danče,Bichler Max,Abstreiter Gerhard,Morral Anna Fontcuberta i

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Insituburied GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy

2. Nanotechnology—Bottom-up Meets Top-down;Schmidt,2002

3. Selective epitaxial growth by molecular beam epitaxy

4. Selective area epitaxy of GaSb and AlGaSb by metalorganic molecular beam epitaxy

5. In-situ observation of GaAs selective epitaxy on GaAs (111)B substrates

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2. Atomic Level Insight into the Nucleation of SnSe Thin Films Using Graphene Mask in Molecular Beam Epitaxy: ReaxFF Molecular Dynamics Simulations;The Journal of Physical Chemistry C;2024-08-19

3. Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks;Nano Letters;2022-05-04

4. Selective area growth rates of III-V nanowires;Physical Review Materials;2021-09-01

5. Phase-Pure Wurtzite GaAs Nanowires Grown by Self-Catalyzed Selective Area Molecular Beam Epitaxy for Advanced Laser Devices and Quantum Disks;ACS Applied Nano Materials;2020-10-19

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