Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Quality
2. Fabrication of GaN wafers for electronic and optoelectronic devices
3. Chemical polishing of bulk and epitaxial GaN
4. Dry etching of GaN substrates for high-quality homoepitaxy
5. Growth of High Quality, MOCVD Grown Ga-Polar GaN Layers on GaN Substrates after Novel Reactive Ion Etching
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4. Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth;Japanese Journal of Applied Physics;2021-10-11
5. Rapid Estimation of Removal Rate of Chemical Mechanical Polishing of Gallium Nitride Substrate by Quantitative Diagnosis of Cathodoluminescence Images;ECS Journal of Solid State Science and Technology;2021-10-01
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