Dry etching of GaN substrates for high-quality homoepitaxy-Reference-Cited by-同舟云学术

Dry etching of GaN substrates for high-quality homoepitaxy

Published:1999-02-22 Issue:8 Volume:74 Page:1123-1125
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schauler M.,Eberhard F.,Kirchner C.,Schwegler V.,Pelzmann A.,Kamp M.,Ebeling K. J.,Bertram F.,Riemann T.,Christen J.,Prystawko P.,Leszczynski M.,Grzegory I.,Porowski S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.123463

Reference8 articles.

1. Blue light-emitting diodes on GaN substrates, growth and characterization

2. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates

3. Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

4. Growth of Ga-face and N-face GaN films using ZnO Substrates

5. Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

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