InSb/InAs/InGa(Al)As/GaAs(0 0 1) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 μm-Reference-Cited by-同舟云学术

InSb/InAs/InGa(Al)As/GaAs(0 0 1) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 μm

Published:2017-11 Issue: Volume:477 Page:97-99
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chernov M.Yu.,Komkov O.S.^ORCID,Firsov D.D.,Meltser B.Ya.,Semenov A.N.,Terent’ev Ya.V.,Brunkov P.N.,Sitnikova A.A.,Kop’ev P.S.,Ivanov S.V.,Solov’ev V.A.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

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2. Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures;Terent’ev;Appl. Phys. Lett.,2014

3. Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range;Solov’ev;Tech. Phys. Lett.,2016

4. Room-temperature 3.9-4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix;Solov’ev;Appl. Phys. Lett.,2005

5. Temperature-dependent photoluminescence from type-II InSb/InAs quantum dots;Lyublinskaya;J. Appl. Phys.,2006

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