Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources
Author:
Funder
EPSRC
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Nitrogen doping of ZnSe and CdTe epilayers: A comparison of two rf sources
2. Unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy
3. Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates
4. Wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy
5. Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h
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1. Stress control in thick AlN/c-Al2O3 templates grown by plasma-assisted molecular beam epitaxy;Semiconductor Science and Technology;2021-01-23
2. Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD);Journal of Electronic Materials;2020-04-13
3. Device characteristics of enhancement mode double heterostructure DH-HEMT with boron-doped GaN gate cap layer for full-bridge inverter circuit;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2017-08-03
4. Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite Al x Ga 1-x N;Progress in Crystal Growth and Characterization of Materials;2017-06
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